Hot-zone parts and assembly in Sapphire Growing Furnaces

 

As the hardest of all oxide crystals, Sapphire(Al2O3) has a combination of optical and physical properties that make it the best choice for a variety of demanding applications. It has good thermal properties, excellent electrical and dielectric properties and is resistant to chemical attack. Sapphire maintains its strength even at high temperatures. These properties encourage the use of Sapphire as the LED substrate in aggressive environments where reliability, optical transmission and strength are required. With the tremendous growth of the LED TV and LED lighting market, there is an increasingly strong demand for sapphire used as the LED substrate.

 

The common methods of sapphire crystal growing:

 

Czochralski Method: Pull from the melt.

Kyropoulos Method: Dip and turn.

EFG Method (Edge Defined Film-fed Growth): Pull through die.

Heat Exchange Method, HEM method

Vertical Horizontal Gradient Freezing (VHGF), Korea Sapphire Technology Company technology

ES2-GSA method: USA Rubicon Technology Inc. technology.

 

 

Due to its high temperature resistance, low pollution and other good characteristics, tungsten and molybdenum are used to manufacture the hot zone components in sapphire grower including: tungsten crucibles, molybdenum crucibles, heaters, tungsten tubes, heat insulation screens, supports, covers etc.

 

We offer    30Kg   60Kg   85Kg     120Kg full set hot zone in the sapphire growing furnace and all the tungsten, molybdenum components used in hot zone.